✦ LIBER ✦

An accurate MESFET model for linear and microwave circuit design

✍ Scribed by Scheinberg, N.; Bayruns, R.J.; Wallace, P.W.; Goyal, R.

Book ID: 119773755
Publisher: IEEE
Year: 1989
Tongue: English
Weight: 585 KB
Volume: 24
Category: Article
ISSN: 0018-9200
DOI: 10.1109/4.18619

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Computationally efficient and accurate c

Computationally efficient and accurate capacitance model for the GaAs MESFET for microwave nonlinear circuit design

✍ Tellez, J.R.; Mezher, K.; Al-Daas, M. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 687 KB

An accurate JFET/MESFET model for circui

An accurate JFET/MESFET model for circuit analysis

✍ Cornelis D. Hartgring 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 868 KB

An Approach for Determining an Equivalen

An Approach for Determining an Equivalent Circuit Model for Traveling-Wave MESFET Design

✍ KADDOUR, M.; GHARSALLAH, A.; GHARBI, A.; BAUDRAND, H. 📂 Article 📅 2004 🏛 Taylor and Francis Group 🌐 English ⚖ 739 KB

Multidimensional Cauchy method and adapt

Multidimensional Cauchy method and adaptive sampling for an accurate microwave circuit modeling

✍ Peik, S.F.; Mansour, R.R.; Chow, Y.L. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 244 KB

Comparing the MESFET and HEMT models for

Comparing the MESFET and HEMT models for efficient circuit design

✍ R. Touhami; M. C. E. Yagoub; H. Baudrand 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 568 KB

## Abstract In this paper, the relative advantages of several widely used MESFET and HEMT models have been compared. The nonlinear behaviours of the Curtice quadratic, Curtice cubic, Statz, Materka, Rodriguez, and Chalmers models were investigated through their current–voltage–temperature character

Semiempirical model for admittance and s

Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications

✍ Sneha Kabra; Harsupreet Kaur; Subhasis Haldar; Mridula Gupta; R. S. Gupta 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 515 KB

## Abstract A semiempirical model of GaN MESFET to evaluate admittance parameters, scattering parameters, maximum unilateral transducer power gain, and maximum stable gain is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model