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An 88 nm gate-length In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As InP-based HEMT with f max of 201 GHz

✍ Scribed by Zhong, Yinghui; Wang, Xiantai; Su, Yongbo; Cao, Yuxiong; Jin, Zhi; Zhang, Yuming; Liu, Xinyu

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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Fabrication of 150-nm Al0.48In0.52As/Ga0

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