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Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

✍ Scribed by H. Kanoh; O. Sugiura; P. Breddels; M. Matsumura

Book ID
126598893
Publisher
IEEE
Year
1990
Tongue
English
Weight
229 KB
Volume
11
Category
Article
ISSN
0741-3106

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Plasma enhanced chemical vapor deposited
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistorsβ€”a critical review
✍ Yue Kuo πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 400 KB

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN x ) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today. In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the