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Amorphous-crystal silicon interfaces: structure and movement under ion beam irradiation

โœ Scribed by Anna Battaglia; Francesco Priolo; Emanuele Rimini

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
698 KB
Volume
56-58
Category
Article
ISSN
0169-4332

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## Abstract We report on inโ€situ investigations of a recrystallization process of amorphous and damaged crystalline parts generated during ionโ€beam induced rippling on a Si(100) surface. The ripple structure was created by 60 keV ^40^Ar^+^ irradiation with a dose of โˆผ5 ร— 10^17^ ions/cm^2^ at ion in