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Crystal-amorphous-silicon interface kinetics under ion beam irradiation

✍ Scribed by F. Priolo; A. La Ferla; C. Spinella; E. Rimini; S.U. Campisano; G. Ferla

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
664 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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## Abstract We report on in‐situ investigations of a recrystallization process of amorphous and damaged crystalline parts generated during ion‐beam induced rippling on a Si(100) surface. The ripple structure was created by 60 keV ^40^Ar^+^ irradiation with a dose of ∼5 × 10^17^ ions/cm^2^ at ion in