## Abstract Four Ge~2~Sb~2~Te~5~ thin films were prepared by pulsed laser deposition (PLD) at 58, 100, 140, and 190 mJ/pulse laser energy, respectively. The influence of laser energy on the crystallization of Ge~2~Sb~2~Te~5~ was investigated. The result shows that laser energy has evident effect on
Amorphous and crystallized Ge–Sb–Te thin films deposited by pulsed laser: Local structure using Raman scattering spectroscopy
✍ Scribed by P. Němec; V. Nazabal; A. Moreac; J. Gutwirth; L. Beneš; M. Frumar
- Book ID
- 118210112
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 643 KB
- Volume
- 136
- Category
- Article
- ISSN
- 0254-0584
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