## Silicon with thermally-grown oxide overlayers m the thickness range IS-89 A IS studied by angulardcpendent XPS. Electron attenuation lengths at 1382 eV are found to be 37 +-4 A in SiOz and 27 +-6 A in Si. Single-crystal effects and thin-layer anomalies are also discussed.
Aluminum position in Rb-feldspar as determined by X-ray photoelectron spectroscopy
β Scribed by Atsushi Kyono; Mitsuyoshi Kimata; Tamao Hatta
- Publisher
- Springer
- Year
- 2003
- Tongue
- English
- Weight
- 173 KB
- Volume
- 90
- Category
- Article
- ISSN
- 0028-1042
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