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Aluminum nitride deep-ultraviolet light-emitting p–n junction diodes

✍ Scribed by Taniyasu, Yoshitaka; Kasu, Makoto


Book ID
123456002
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
879 KB
Volume
17
Category
Article
ISSN
0925-9635

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## Abstract We report on the development of AlGaN‐based deep UV light emitting diodes (LEDs) with emission wavelengths from 254 to 340 nm, focusing on the improvement of 280 nm LEDs efficiency. Under optimal device structure the UV LEDs efficiency was found to strongly depend on the AlGaN material