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Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

✍ Scribed by Kuo, C. H.; Feng, H. C.; Kuo, C. W.; Chen, C. M.; Wu, L. W.; Chi, G. C.

Book ID
120605416
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
427 KB
Volume
90
Category
Article
ISSN
0003-6951

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## Abstract GaN‐based ultraviolet light‐emitting diodes with identical contact areas but different contact shapes are studied. Interdigitated multifinger contacts with reduced finger width result in a lower series resistance and a thermal roll‐over of the output power at higher cw currents in compa