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Alternating current conductivity of anisotropically nanostructured silicon

โœ Scribed by P. A. Forsh; M. N. Martyshov; V. Yu. Timoshenko; P. K. Kashkarov

Book ID
111443512
Publisher
Springer
Year
2006
Tongue
English
Weight
184 KB
Volume
40
Category
Article
ISSN
1063-7826

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## Abstract Anisotropic nanostructuring of bulk silicon (Si) wafers leads to a significant inโ€plane optical anisotropy of single porous silicon (PSi) layers. Additionally a variation of the etching current in time allows a controlled modification of the porosity along the growth direction and there