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AlInAs-GaInAs HEMT for microwave and millimeter-wave applications

✍ Scribed by Mishra, U.K.; Brown, A.S.; Delaney, M.J.; Greiling, P.T.; Krumm, C.F.

Book ID
114551973
Publisher
IEEE
Year
1989
Tongue
English
Weight
660 KB
Volume
37
Category
Article
ISSN
0018-9480

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πŸ“œ SIMILAR VOLUMES

Microwave performance and reliability ev
Microwave performance and reliability evaluation of MOCVD-grown AlInAs/GaInAs/InP-based HEMTs
✍ M. Nawaz; W. Strupinski; J. Stenarson; S. H. M. Persson; H. Zirath πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 289 KB

We report on the microwa¨e performance and reliability e¨aluation of AlInAsrGaInAsrInP HEMTs with InP as a top surface layer grown by MOCVD. It is found that HEMTs with thin InP surface layers pro¨ide high threshold ¨oltage uniformity, and less thermal and bias stress degradation compared to con¨ent