✦ LIBER ✦

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

✍ Scribed by El Fatimy, A.; Dyakonova, N.; Meziani, Y.; Otsuji, T.; Knap, W.; Vandenbrouk, S.; Madjour, K.; TheÌron, D.; Gaquiere, C.; Poisson, M. A.; Delage, S.; Prystawko, P.; Skierbiszewski, C.

Book ID: 120058030
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 501 KB
Volume: 107
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3291101

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Enhancement of breakdown voltage in AlGa

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

✍ Karmalkar, S.; Mishra, U.K. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 152 KB

Dopant-Free GaN/AlN/AlGaN Radial Nanowir

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

✍ Li, Yat (author);Xiang, Jie (author);Qian, Fang (author);Gradečak, Silvija (auth 📂 Article 📅 2006 🏛 American Chemical Society 🌐 English ⚖ 418 KB

Dopant-Free GaN/AlN/AlGaN Radial Nanowir

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

✍ Li, Yat (author);Xiang, Jie (author);Qian, Fang (author);Gradečak, Silvija (auth 📂 Article 📅 2006 🏛 American Chemical Society 🌐 English ⚖ 418 KB

High sensitivity carbon monoxide sensors

High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

✍ Hung, S. C.; Chen, C. W.; Shieh, C. Y.; Chi, G. C.; Fan, R.; Pearton, S. J. 📂 Article 📅 2011 🏛 American Institute of Physics 🌐 English ⚖ 851 KB

AlGaN/GaN high electron mobility transis

AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation

✍ Lalinsky, T.; Vanko, G.; Vallo, M.; Dobrocka, E.; Ryger, I.; Vincze, A. 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 737 KB

Nanoscale mapping of temperature and def

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

✍ Lin, Chung-Han; Merz, T. A.; Doutt, D. R.; Hetzer, M. J.; Joh, Jungwoo; del Alam 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 675 KB