## Abstract The authors compared DC and microwave performance of AlGaN/GaN heterojunction field‐effect transistors (HFETs) fabricated on epitaxial structures with different thickness of GaN buffer layer. The structures were grown by low‐pressure metal‐organic vapour phase epitaxy on semi‐insulating
✦ LIBER ✦
AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics
✍ Scribed by Hodges, C.; Anaya Calvo, J.; Stoffels, S.; Marcon, D.; Kuball, M.
- Book ID
- 121472533
- Publisher
- American Institute of Physics
- Year
- 2013
- Tongue
- English
- Weight
- 618 KB
- Volume
- 103
- Category
- Article
- ISSN
- 0003-6951
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