ALGAAS/GAAS TJS laser diodes fabricated on Si substrates by MOCVD
โ Scribed by Xiongwei Hu; Shiro Sakai; Tetsuo Soga; Masayoshi Umeno
- Book ID
- 103183666
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 679 KB
- Volume
- 40-41
- Category
- Article
- ISSN
- 0022-2313
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
GaAs layers and A1GaAs solar cells grown on Si substrates have been characterized by time-resolved photoluminescence (TRP). The effects of the growth temperature, the strained layer superlattice (SLS), and the thermal cycle annealing (TCA) on the TRP characteristics are discussed. The minority carri
Growth and Characterization of Direct-connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE High output power (above 3 mW/facet) AlGaAs/GaAs Transverse-Junction Stripe light emitting diodes have been grown on Semi-Insulating (100) GaAs substrates by Liquid Phase Epitaxy. These