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AlGaAs/GaAs Heterojunction Bipolar Transistors on Si substrate using epitaxial lift-off

โœ Scribed by J. Fan; C. Lee; J. Hwang; J. Hwang


Book ID
126646305
Publisher
IEEE
Year
1995
Tongue
English
Weight
265 KB
Volume
16
Category
Article
ISSN
0741-3106

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Fully planar AlGaAs/GaAs heterojunction
โœ R. Driad; A.M. Duchenois; G. Le Roux; D. Zerguine; F. Alexandre; J.L. Benchimol; ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 242 KB

Fully planar A1GaAs/GaAs heterojunction bipolar transitors (HBTs) were fabricated successfully using chemical beam epitaxy selective regrowth. The device performance and fabrication process are presented along with characterization of the electrical, structural and optical properties of GaAs : C lay