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Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors

✍ Scribed by Ren, F.; Abernathy, C. R.; Chu, S. N. G.; Lothian, J. R.; Pearton, S. J.


Book ID
121792617
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
352 KB
Volume
66
Category
Article
ISSN
0003-6951

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