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ALD of YF3 Thin Films from TiF4 and Y(thd)3 Precursors

✍ Scribed by Tero Pilvi; Esa Puukilainen; Frans Munnik; Markku Leskelä; Mikko Ritala

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
355 KB
Volume
15
Category
Article
ISSN
0948-1907

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ALD of Hafnium Dioxide Thin Films Using
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## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.

ALD of Hafnium Dioxide Thin Films Using
ALD of Hafnium Dioxide Thin Films Using the New Alkoxide Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4
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A new alkoxide precursor, Hf(mp) 4 [mp = 3-methyl-3-pentoxide, OC(CH 3 )(C 2 H 5 ) 2 ] has been employed in the atomic layer deposition (ALD) of HfO 2 thin films using water (H 2 O) as the oxygen source. The self-limiting ALD process via alternate surface reactions of Hf(mp) 4 and H 2 O is confirmed

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Yttrium oxide thin film deposition by atomic layer epitaxy (ALE) was studied at 200±425 C using Y(thd) 3 , Y(thd) 3 (bipyridyl), or Y(thd) 3 (1,10-phenanthroline) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) as an yttrium precursor, and ozone as an oxygen source. All yttrium precursors were analyzed