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AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Internal Stress in Freestanding 3C-SiC Grown on Si and Relation to Carrier Lifetime

✍ Scribed by Grivickas, V.; Gulbinas, K.; Manolis, G.; Kato, M.; Linnros, J.; Ferro, Gabriel; Siffert, Paul

No coin nor oath required. For personal study only.

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