An ion beam technique has been developed that allows the preparation of bevels from semiconducting heteroepitaxial structures with smooth surfaces and very shallow angles between 0.1Ä and 0.001Ä. The bevels are used for AES depth proÐling of heterostructures by the line scan technique. Comparison of
AES Depth profiling of semiconducting multilayer structures using an ion beam bevelling technique
✍ Scribed by M. Procop; A. Klein; I. Rechenberg; D. Krüger
- Publisher
- Springer
- Year
- 1997
- Tongue
- English
- Weight
- 512 KB
- Volume
- 358
- Category
- Article
- ISSN
- 1618-2650
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