Advantages and limitations of silicon-on-insulator technology in radiation environments

✍ Scribed by J.R. Schwank

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 636 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00076-2

✦ Synopsis

The fact that silicon-on-insulator (SOl) ICs are built on an insulating layer gives them unique advantages in radiation environments. SOl ICs are inherently less prone to single-event effects and high dose rate transient effects. However, floating body bipolar effects can limit the hardness of SOl devices unless steps are taken to reduce them. The buried oxide of a SOl transistor makes total-dose response more complex and hardening more challenging than for bulk-silicon ICs. If proper measures are taken to harden SOl ICs, they can have significant performance and hardness advantages over bulk-silicon ICs in space and nuclear environments. I.