Advanced Gate Stacks for High-Mobility Semiconductors

✍ Scribed by S. Takagi (auth.), Dr. Athanasios Dimoulas, Evgeni Gusev, Professor Paul C. McIntyre, Professor Marc Heyns (eds.)

Publisher: Springer-Verlag Berlin Heidelberg
Year: 2007
Tongue: English
Leaves: 396
Series: Advanced Microelectronics 27
Edition: 1
Category: Library

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✦ Synopsis

Will nanoelectronic devices continue to scale according to Moore’s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator)? Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology? How do these materials and devices behave at the nanoscale? The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.

✦ Table of Contents

Front Matter....Pages I-XXII
Strained-Si CMOS Technology....Pages 1-19
High Current Drivability MOSFET Fabricated on Si(110) Surface....Pages 21-41
Advanced High-Mobility Semiconductor-on-Insulator Materials....Pages 43-72
Passivation and Characterization of Germanium Surfaces....Pages 73-113
Interface Engineering for High-κ Ge MOSFETs....Pages 115-138
Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-κ/Metal Gate Metal-Oxide-Semiconductor Devices....Pages 139-164
Modeling of Growth of High-κ Oxides on Semiconductors....Pages 165-179
Physical, Chemical, and Electrical Characterization of High-κ Dielectrics on Ge and GaAs....Pages 181-209
Point Defects in Stacks of High-κ Metal Oxides on Ge: Contrast with the Si Case....Pages 211-228
High κ Gate Dielectrics for Compound Semiconductors....Pages 229-256
Interface Properties of High-κ Dielectrics on Germanium....Pages 257-267
A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-κ Materials and Films....Pages 269-292
Germanium Nanodevices and Technology....Pages 293-313
Opportunities and Challenges of Germanium Channel MOSFETs....Pages 315-332
Germanium Deep-Submicron p -FET and n -FET Devices, Fabricated on Germanium-On-Insulator Substrates....Pages 333-340
Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics....Pages 341-361
Fabrication of MBE High-κ MOSFETs in a Standard CMOS Flow....Pages 363-374
Back Matter....Pages 375-383

✦ Subjects

Electronics and Microelectronics, Instrumentation

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