<p><P>Will nanoelectronic devices continue to scale according to Mooreβs law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained
Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics)
β Scribed by A. Dimoulas, E. Gusev, P.C. McIntyre, M. Heyns
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Leaves
- 397
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
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