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Activation Energy of Trapping Centres in SiO2 Gate Insulator

✍ Scribed by Petr, I.

Book ID
105378954
Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
293 KB
Volume
93
Category
Article
ISSN
0031-8965

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In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of