A statistical description of the global performance of on-chip spiral inductors, based on extensive measurement is presented. These inductors were fabricated with different turn numbers or track lengths/track widths, but with the same spacing. From the S parameters measured using a de-embedding tech
β¦ LIBER β¦
Accurate Systematic Model-Parameter Extraction for On-Chip Spiral Inductors
β Scribed by Hao-Hui Chen; Huai-Wen Zhang; Shyh-Jong Chung; Jen-Tsai Kuo; Tzung-Chi Wu
- Book ID
- 114619183
- Publisher
- IEEE
- Year
- 2008
- Tongue
- English
- Weight
- 335 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Model description and parameter extracti
β
W. Y. Yin; S. J. Pan; L. W. Li; Y. B. Gan
π
Article
π
2004
π
John Wiley and Sons
π
English
β 216 KB
A simple parameter extraction method of
β
Kang, M.; Gil, J.; Hyungcheol Shin
π
Article
π
2005
π
IEEE
π
English
β 399 KB
A Physical Model for On-Chip Spiral Indu
β
X. Huo; Philip C. H. Chan; Kevin J. Chen; Howard C. Luong
π
Article
π
2006
π
IEEE
π
English
β 369 KB
Characteristic-function approach to para
β
Fengyi Huang; Nan Jiang; Bian, E.
π
Article
π
2006
π
IEEE
π
English
β 300 KB
Scalable distributed-capacitance model f
β
Fengyi Huang; Jingxue Lu; Nan Jiang
π
Article
π
2006
π
John Wiley and Sons
π
English
β 184 KB
## Abstract We present physicsβbased modeling for silicon onβchip spiral inductors, taking into account the coupling capacitance between metal spirals. The coupling capacitance __C__~__p__~ is calculated using a distributedβcapacitance model based on finiteβelement analysis. As demonstrated for a s
Frequency-independent equivalent-circuit
β
Yu Cao; Groves, R.A.; Xuejue Huang; Zamdmer, N.D.; Plouchart, J.-O.; Wachnik, R.
π
Article
π
2003
π
IEEE
π
English
β 666 KB