Accurate modeling of an ion-implanted MESFET
β Scribed by S.N. Chattopadhyay; V.K. Singh; B.B. Pal
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 452 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
A quasi-two-dimensional numerical model of an optically ( ) gated GaAs metal semiconductor field-effect transistor MESFET has been de¨eloped for the characterization of the de¨ice as a photodetector. The model considers the channel to be nonuniformly doped. The model in¨ol¨es the solution of a 1-D P
## Abstract The noise performance of an optically controlled MESFET (OPFET) has been reported for the first time. An equivalent noise model of the OPFET has been developed for computation of the noiseβequivalent power (NEP) and signalβtoβnoise ratio at the output of the OPFET. The variations of NEP