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On the scaling of an ion-implanted silicon MESFET

✍ Scribed by S.N. Chatttopadhyay; B.B. Pal

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
400 KB
Volume
32
Category
Article
ISSN
0038-1101

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Quasi-two-dimensional simulation of an i
Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector
✍ M. Madheswaran; V. Rajamani; P. Chakrabarti πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 216 KB πŸ‘ 2 views

A quasi-two-dimensional numerical model of an optically ( ) gated GaAs metal semiconductor field-effect transistor MESFET has been de¨eloped for the characterization of the de¨ice as a photodetector. The model considers the channel to be nonuniformly doped. The model in¨ol¨es the solution of a 1-D P