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Accurate extraction of dual-gate field-effect-transistor parasitic elements

โœ Scribed by D. Langrez; E. Delos; G. Salmer


Book ID
112146628
Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
519 KB
Volume
9
Category
Article
ISSN
0895-2477

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Device characteristics of polymer dual-g
โœ F. Maddalena; M. Spijkman; J.J. Brondijk; P. Fonteijn; F. Brouwer; J.C. Hummelen ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 752 KB

Dual-gate organic field-effect transistors (OFETs) were fabricated by solution processing using different p-type polymer semiconductors and polymer top-dielectric materials on prefabricated substrates with gold source-drain contacts defined by photolithography. The semiconductors and top dielectrics