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Application of split-gate and dual-gate field-effect transistor designs to InAs field-effect transistors

✍ Scribed by K.F. Longenbach; R. Beresford; W.I. Wang

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 267 KB
Volume: 33
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(90)90102-k

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