Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
β Scribed by Dingle, R.; Sell, D. D.; Stokowski, S. E.; Ilegems, M.
- Book ID
- 118028922
- Publisher
- The American Physical Society
- Year
- 1971
- Tongue
- English
- Weight
- 529 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1098-0121
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes
## Abstract GaN and InGaN layers grown around ZnO nanopillars by metalorganic vapour phase epitaxy (MOVPE) are investigated by means of photoluminescence (PL) and locally resolved cathodoluminescence (CL). A multi layer growth process involving deposition at different growth conditions in a stepβwi