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Abruptness of a-Si:H∕c-Si interface revealed by carrier lifetime measurements

✍ Scribed by De Wolf, Stefaan; Kondo, Michio

Book ID
121222884
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
639 KB
Volume
90
Category
Article
ISSN
0003-6951

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✍ C. Godet; J. Kanicki 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 314 KB

The a-Si N, ,:Hic-Si interface density of states is studied by the photocapacitance transient spectroscopy (PCTS) technique. After illumination with 4.13 eV photons, the PCTS reveals an interface defect creation while the midgap voltage shift indicates a hole injection from c-Si and subsequent hole