Properties of a-Si:H based interface transient layers measured by in-situ ellipsometry
β Scribed by Yoshinori Hatanaka; Kunihiko Mitsuoka; Tomuo Yamaguchi
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 404 KB
- Volume
- 41-42
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
A procedure for the determination of the interface layer thickness between the bulk Γlm and the Si substrate SiO 2 from single-wavelength null ellipsometric data is described. The e β ect of the angular errors in the angle of incidence is eliminated because it is found along with the Γlm and interfac
## Abstract Poly(methacryloyloxy ethyltrimethylammonium chloride) (PMETAC), poly(sulfopropylmethacrylate potassium salt), or poly(__N__βisopropyl acrylamide) (PNIPAM) brushes are synthesized by means of the atom transfer radical polymerization technique from gold surfaces coated with a monolayer of