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Abnormally Deep Structural Changes in Ion-Implanted Silicon

✍ Scribed by Pavlov, P. V. ;Tetelbaum, D. I. ;Skupov, V. D. ;Semin, Yu. A. ;Zorina, G. V.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
452 KB
Volume
94
Category
Article
ISSN
0031-8965

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## Abstract Results of X‐ray investigations of Hg~1–__x__~ Cd~__x__~ Te (__x__ = 0.25) epitaxial layers after single and two‐stage arsenic ion implantation with the energy __E__ = 100 keV are represented. It has been established that for doses __D__~1~ = 2 Γ— 10^14^ ions/cm^2^ and __D__~2~ = (2 Γ— 10