The atomic and electronic structures of Ge dimers adsorbed on top of a Si(100) flat surface has been investigated by first-principles molecular dynamics method. Four high-symmetry configurations have been considered and thoroughly relaxed. The most stable configuration for Ge dimers is found to be o
Ab initio study of the nitridation of the GaAs (100) surfaces
โ Scribed by A.P. Castro; H.W. Leite Alves
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 169 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0026-2692
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