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A velocity-overshoot capacitance model for 0.1 μm MOS transistors

✍ Scribed by J.B. Kuo; Y.W. Chang; C.S. Lai

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
515 KB
Volume
39
Category
Article
ISSN
0038-1101

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Physical limitations and design for sub-
Physical limitations and design for sub-0.1-μm MOS devices: Carrier velocity overshoot and performance fluctuation
✍ Tomohisa Mizuno; Ryuji Ohba 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 153 KB

We study the physical limitations of MOSFETs around 0.1 mm and introduce a new scaling scenario for sub-0.1-mm MOS devices. At low transverse electric fields, that is, for low carrier densities in SOI devices under low gate drive conditions, it is possible to achieve electron velocity overshoot due