A two-dimensional numerical model of a single-electron transistor
β Scribed by I. I. Abramov; E. G. Novik
- Book ID
- 110679256
- Publisher
- Springer
- Year
- 2000
- Tongue
- English
- Weight
- 297 KB
- Volume
- 29
- Category
- Article
- ISSN
- 1063-7397
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π SIMILAR VOLUMES
A metal single-electron transistor (SET) has been fabricated on top of a GaAs=AlGaAs Hall-bar mesa containing a two-dimensional electron system (2DES). The chemical potential variations of the 2DES with applied magnetic ΓΏeld are sensitively measured by the SET.
By mechanical scratching the surface of a GaAs=AlGaAs heterostructure with an atomic force microscope an energetic barrier for the two-dimensional electron gas is formed. The barrier formation is in situ controlled by measuring the room-temperature resistance across the barrier. Barrier heights can