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Study of the chemical potential of a two-dimensional electron system using a single-electron transistor

✍ Scribed by Y.Y.Wei J.Weis; K.von Klitzing; K; Eberl

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
117 KB
Volume
1
Category
Article
ISSN
1386-9477

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✦ Synopsis

A metal single-electron transistor (SET) has been fabricated on top of a GaAs=AlGaAs Hall-bar mesa containing a two-dimensional electron system (2DES). The chemical potential variations of the 2DES with applied magnetic ΓΏeld are sensitively measured by the SET.

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✍ H.W Schumacher; U.F Keyser; U Zeitler; R.J Haug; K Eberl πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 126 KB

By mechanical scratching the surface of a GaAs=AlGaAs heterostructure with an atomic force microscope an energetic barrier for the two-dimensional electron gas is formed. The barrier formation is in situ controlled by measuring the room-temperature resistance across the barrier. Barrier heights can