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Controlled mechanical AFM machining of two-dimensional electron systems: fabrication of a single-electron transistor

✍ Scribed by H.W Schumacher; U.F Keyser; U Zeitler; R.J Haug; K Eberl

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
126 KB
Volume
6
Category
Article
ISSN
1386-9477

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✦ Synopsis

By mechanical scratching the surface of a GaAs=AlGaAs heterostructure with an atomic force microscope an energetic barrier for the two-dimensional electron gas is formed. The barrier formation is in situ controlled by measuring the room-temperature resistance across the barrier. Barrier heights can be tuned from some mV up to more than 100 mV as determined by measurement of the thermally activated current. Low-resistance barriers show typical tunnelling behaviour at low temperatures whereas high-resistance lines show G resistances in a bias range up to some 10 V allowing their use as in-plane gates. Transport measurements of a side gated single-electron transistor fabricated this way are presented.

πŸ“œ SIMILAR VOLUMES

Study of the chemical potential of a two
Study of the chemical potential of a two-dimensional electron system using a single-electron transistor
✍ Y.Y.Wei J.Weis; K.von Klitzing; K; Eberl πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 117 KB

A metal single-electron transistor (SET) has been fabricated on top of a GaAs=AlGaAs Hall-bar mesa containing a two-dimensional electron system (2DES). The chemical potential variations of the 2DES with applied magnetic ΓΏeld are sensitively measured by the SET.