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A two-dimensional model for the excess interstitial distribution in silicon during thermal oxidation

✍ Scribed by Yun-Sheung Shin; Choong-Ki Kim

Book ID: 114594778
Publisher: IEEE
Year: 1984
Tongue: English
Weight: 438 KB
Volume: 31
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1984.21609

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