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A mathematical model for the formation of inhomogeneous structures in thermally oxidized silicon layers

✍ Scribed by G. Ya. Krasnikov; N. A. Zaitsev; I. V. Matyushkin

Book ID
110129316
Publisher
SP MAIK Nauka/Interperiodica
Year
2002
Tongue
English
Weight
58 KB
Volume
47
Category
Article
ISSN
1028-3358

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A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxy