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A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability

โœ Scribed by Mori, M..; Oyama, K..; Kohno, Y..; Sakano, J..; Uruno, J..; Ishizaka, K..; Kawase, D..


Book ID
114618804
Publisher
IEEE
Year
2007
Tongue
English
Weight
886 KB
Volume
54
Category
Article
ISSN
0018-9383

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Trench IGBT failure mechanisms evolution
โœ A. Benmansour; S. Azzopardi; J.C. Martin; E. Woirgard ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 567 KB

Two extreme configurations under short-circuit conditions leading to the punch through trench IGBT failure under the effect of the temperature and the gate resistance have been studied. By analyzing internal physical parameters, it was highlighted that the elevation of the temperature causes an acce