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A transient model for insulated gate bipolar transistors (IGBTs)

โœ Scribed by Ryu, Sehwan; Lee, Myungsoo; Hajji, Mohsen A.; Ahn, Hyungkeun; Han, Deukyoung; El Nokali, Mahmoud


Book ID
121449993
Publisher
Taylor and Francis Group
Year
2008
Tongue
English
Weight
397 KB
Volume
95
Category
Article
ISSN
0020-7217

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