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A transient capacitance study of radiation-induced defects in aluminum-doped silicon

✍ Scribed by Lee, Y. H. ;Wang, K. L. ;Jaworowski, A. ;Mooney, P. M. ;Cheng, L. J. ;Corbett, J. W.

Publisher: John Wiley and Sons
Year: 1980
Tongue: English
Weight: 455 KB
Volume: 57
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210570228

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