A tin oxide field-effect transistor
β Scribed by H.A. Klasens; H. Koelmans
- Publisher
- Elsevier Science
- Year
- 1964
- Tongue
- English
- Weight
- 167 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
We have investigated the energy band structure of the 40 nm gate length n-metal-oxidesemiconductor field effect transistor (MOSFET) recently fabricated by M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro and H. Iwai (IEEE Transaction on Electron Devices 42: 1822 (1995)). By the classical particl
The metal-oxide-semiconductor (MOS) field effect transistor (FET) using 'oxidized Β΅c-Si/ultrathin oxide' gate structure was studied. It was found that this structure shows negative differential resistance behavior, which can be explained by the Coulomb blockade effect of trapped carriers and immedia