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A three dimensional semiconductor device simulator for GaAs/AlGaAs heterojunction bipolar transistor analysis

โœ Scribed by Chan, H.-C.; Shieh, T.-J.

Book ID
114538917
Publisher
IEEE
Year
1991
Tongue
English
Weight
537 KB
Volume
38
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES

A parallel 3D semiconductor device simul
A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors
โœ Antonio J. Garcรญa-Loureiro; J. M. Lรณpez-Gonzรกlez; Tomรกs F. Pena ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 204 KB

## Abstract In this paper, we present a parallel threeโ€dimensional semiconductor device simulator for gradual heterojunction bipolar transistor. This simulator uses the driftโ€diffusion transport model. The Poisson equation and continuity equations were discretized using a finite element method (FEM