A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors
✍ Scribed by Antonio J. García-Loureiro; J. M. López-González; Tomás F. Pena
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 204 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0894-3370
- DOI
- 10.1002/jnm.482
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✦ Synopsis
Abstract
In this paper, we present a parallel three‐dimensional semiconductor device simulator for gradual heterojunction bipolar transistor. This simulator uses the drift‐diffusion transport model. The Poisson equation and continuity equations were discretized using a finite element method (FEM) on an unstructured tetrahedral mesh. Fermi–Dirac statistics is considered in our model and a compact formulation is used that makes it easy to take into account other effects such as the non‐parabolic nature of the bands or the presence of various subbands in the conduction process. Domain decomposition methods were tested to solve the linear systems. We have applied this simulator to a gradual heterojunction bipolar transistor (HBT), and we present some measures of the parallel execution time for several solvers and some electrical results. This code has been implemented for distributed memory multicomputers, making use of the MPI message passing standard library and a parallel solver library. Copyright © 2002 John Wiley & Sons, Ltd.