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A technique for minimizing intermodulation distortion of GaAs FET's

✍ Scribed by Koizumi, H.; Nagata, S.; Kanazawa, K.

Book ID
114552060
Publisher
IEEE
Year
1995
Tongue
English
Weight
409 KB
Volume
43
Category
Article
ISSN
0018-9480

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## Abstract This article proposes an alternative method, based on reflection measurements, to characterize intermodulation distortion (IMD) in MEMS switches. Because of the low intermodulation level generated in MEMS switches, its characterization is problematic, requiring high‐power RF tones (high