A method for characterization of intermodulation distortion produced in MEMS switches

✍ Scribed by D. Girbau; L. Pradell; A. Lázaro; D. Peyrou; P. Pons; P. Calmon; R. Plana; F. Coccetti

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 389 KB
• Volume: 51
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.24102

✦ Synopsis

Abstract

This article proposes an alternative method, based on reflection measurements, to characterize intermodulation distortion (IMD) in MEMS switches. Because of the low intermodulation level generated in MEMS switches, its characterization is problematic, requiring high‐power RF tones (high power amplifiers). Using the proposed reflection‐based method, IMD can be characterized saving up to 6 dB power when compared with that power required in a traditional 2‐tone intermodulation measurement set‐up in transmission. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 526–529, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24102