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A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure

✍ Scribed by K. S. Zhuravlev; T. S. Shamirzaev; V. V. Preobrazhenskii; B. R. Semyagin; V. R. Kostyuchenko

Book ID
110120761
Publisher
Springer
Year
1997
Tongue
English
Weight
85 KB
Volume
42
Category
Article
ISSN
1063-7842

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Parameter extraction of a base-collector
Parameter extraction of a base-collector equivalent circuit model for SiGe heterojunction bipolar transistors
✍ Seonghearn Lee πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 107 KB

## Abstract By deriving new __Z__‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation