We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati
✦ LIBER ✦
A study of the effects metal residues in poly(9,9-dioctylfluorene) have on field-effect transistor device characteristics
✍ Scribed by Prashant Sonar; Andrew C. Grimsdale; Martin Heeney; Maxim Shkunov; Iain McCulloch; Klaus Müllen
- Book ID
- 116898272
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 273 KB
- Volume
- 157
- Category
- Article
- ISSN
- 0379-6779
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