𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A study of resonant tunneling in a 3-terminal ballistic device

✍ Scribed by S. Bending; A. Peck; J. Leo; K. v. Klitzing; P. Guéret; H.P. Meier

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
393 KB
Volume
32
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interface roughness: a reason of inacces
Interface roughness: a reason of inaccessibility of the negative resistance region in resonant-tunneling devices
✍ T. Figielski; T. Wosiński; A. M a̧ 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 84 KB

Interface roughness in double-barrier resonant-tunneling devices affects the lateral electron motion in the quantum well and can give rise to subsidiary subbands or quasibound states in the well. We demonstrate that a shoulder frequently appearing beyond the principal resonance peak in the current-v

Evidence of the enhanced resonant tunnel
Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure
✍ Gyungock Kim; Kwang Man Koh; Chong Hoon Kim 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 167 KB

The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measureme